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FMMT593 датащи(PDF) 4 Page - Diodes Incorporated

номер детали FMMT593
подробное описание детали  100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT593 датащи(HTML) 4 Page - Diodes Incorporated

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FMMT593
Document number: DS33106 Rev. 5 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FMMT593
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-120
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-100
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-7
V
IE = -100µA
Collector Cutoff Current
ICBO
-100
nA
VCB = -100V
Emitter Cutoff Current
IEBO
-100
nA
VEB = -5.6V
Collector-Emitter Cut-Off Current
ICES
-100
nA
VCES = -100V
Static Forward Current Transfer Ratio (Note 8)
hFE
100
100
100
50
300
IC = -1mA, VCE = -5V
IC = -250mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
-200
-300
mV
IC = - 250mA, IB = -25mA
IC = - 500mA, IB = -50mA
Base-Emitter Saturation Voltage (Note 8)
VBE(sat)
-1.1
V
IC = -500mA, IB = -50mA
Base-Emitter Turn-On Voltage (Note 8)
VBE(on)
-1.0
V
IC = -1mA, VCE = -5V
Transition Frequency
fT
50
MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Output Capacitance
Cobo
5
pF
VCB = -10V, f = 1MHz
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.



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