DMN3052L

Document number: DS31406 Rev. 4 - 2

2 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN3052L

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Body Leakage

⎯

⎯

±80

±800

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.62

0.9

1.2

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

26

33

52

78

32

42

64

100

m

Ω

Forward Transconductance

⎯

8

⎯

S

Source-Drain Diode Forward Voltage

⎯

0.75

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

555

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

109

⎯

pF

Reverse Transfer Capacitance

⎯

82

⎯

pF

Total Gate Charge

⎯

6.3

⎯

nC

Gate-Source Charge

⎯

1.3

⎯

Gate-Drain Charge

⎯

1.7

⎯

Notes:

4. Short duration pulse test used to minimize self-heating effect.

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 10V

GS

V

= 4.0V

GS

V

= 3.0V

GS

V

= 2.5V

GS

V

= 2.0V

GS

V

= 1.5V

GS

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

3.5

4

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

Pulsed

DS