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BCW65 датащи(PDF) 2 Page - Diodes Incorporated

номер детали BCW65
подробное описание детали  SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
PDF  2 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BCW65 датащи(HTML) 2 Page - Diodes Incorporated

  BCW65 Datasheet HTML 1Page - Diodes Incorporated BCW65 Datasheet HTML 2Page - Diodes Incorporated  
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65AR – 4V
BCW65B – EB
BCW65BR – 5V
BCW65C – EC
BCW65CR – 6V
BCW66F – EF
BCW66FR – 7P
BCW66G – EG
BCW66GR – 5T
BCW66H – EH
BCW66HR – 7M
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCW65
BCW66
UNIT
Collector-Base Voltage
VCBO
60
75
V
Collector-Emitter Voltage
VCEO
32
45
V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC
800
mA
Peak Collector Current(10ms)
ICM
1000
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V(BR)CEO 32
45
VICEO=10mA
ICEO=10mA
BCW65
BCW66
V(BR)CES 60
75
V
IC=10µA
IC=10µA
Emitter-Base Breakdown Voltage
V(BR)EBO 5V
IEBO=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
ICES
20
20
20
20
nA
µ
A
nA
µ
A
VCES= 32V
VCES= 32V,Tamb=150oC
VCES= 45V
VCES= 45V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA VEBO=4V
Collector-Emitter Saturation Voltage
VCE(sat)
0.3
0.7
V
V
IC=100mA, IB=10mA
IC=500mA, IB=50mA*
Base-Emitter Saturation Voltage
VBE(SAT)
2
V
IC=500mA, IB=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
hFE
35
75
100
35
160
250
IC=100µA, VCE=10V
IC= 10mA, VCE= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW65B
BCW66G
hFE
50
110
160
60
250
400
IC=100µA, VCE=10V
IC= 10mA, VCE= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW65C
BCW66H
hFE
80
180
250
100
350
630
IC=100µA, VCE=10V
IC= 10mA, VCE= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
Transition Frequency
fT
100
MHz IC =20mA, VCE=10V
f = 100MHz
Collector-Base Capacitance
Ccbo
8
12
pF
VCBO=10V, f =1MHz
Emitter-Base Capacitance
Cebo
80
pF
VEBO=0.5V, f =1MHz
Noise Figure
N
2
10
dB IC= 0.2mA, VCE= 5V
RG =1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC=150mA
IB1=- IB2=15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
C
B
E
SOT23
BCW65
BCW66
3 - 28
3 - 27



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