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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S003K3 датащи(PDF) 65 Page - STMicroelectronics |
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STM8S003K3 датащи(HTML) 65 Page - STMicroelectronics |
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65 / 100 page  Flash program memory and data EEPROM Table 36: Flash program memory and data EEPROM Unit Max Typ Min (1) Conditions Parameter Symbol V 5.5 2.95 fCPU ≤ 16 MHz Operating voltage (all modes, execution/ write/erase) VDD ms 6.6 6 Standard programming time (including erase) for tprog byte/word/block (1 byte/ 4 bytes/64 bytes) 3.33 3 Fast programming time for 1 block (64 bytes) 3.33 3 Erase time for 1 block (64 bytes) terase cycles 100 TA = 85 °C Erase/write cycles (2) (program memory) NRW 100 k Erase/write cycles (2) (data memory) years 20 TRET = 55°C Data retention (program memory) after 100 erase/write cycles at TA = 85 °C tRET 20 Data retention (data memory) after 10 k erase/write cycles at TA = 85 °C 1 TRET = 85°C Data retention (data memory) after 100 k erase/write cycles at TA = 85 °C mA 2 Supply current (Flash programming or erasing IDD for 1 to 128 bytes) 65/100 DocID018576 Rev 3 Electrical characteristics STM8S003K3 STM8S003F3 |
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