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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F030F4 датащи(PDF) 58 Page - STMicroelectronics |
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STM32F030F4 датащи(HTML) 58 Page - STMicroelectronics |
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58 / 88 page  Electrical characteristics STM32F030x4 STM32F030x6 STM32F030x8 58/88 DocID024849 Rev 1 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 16 for standard I/Os, and in Figure 17 for 5 V tolerant I/Os. VIH High level input voltage TC and TTa I/O 0.445 VDD+0.398 (1) -- V FT and FTf I/O 0.5 VDD+0.2 (1) -- BOOT0 0.2 VDD+0.95 (1) -- All I/Os except BOOT0 pin 0.7 VDD -- Vhys Schmitt trigger hysteresis TC and TTa I/O - 200(1) - mV FT and FTf I/O - 100(1) - BOOT0 - 300(1) - Ilkg Input leakage current (2) TC, FT and FTf I/O TTa in digital mode VSS VIN VDD -- 0.1 µA TTa in digital mode VDD VIN VDDA -- 1 TTa in analog mode VSS VIN VDDA -- 0.2 FT and FTf I/O (3) VDD VIN 5V -- 10 RPU Weak pull-up equivalent resistor (4) VIN VSS 25 40 55 k RPD Weak pull-down equivalent resistor (4) VIN VDD 25 40 55 k CIO I/O pin capacitance -5 - pF 1. Data based on design simulation only. Not tested in production. 2. Leakage could be higher than maximum value, if negative current is injected on adjacent pins. Refer to Table 43: I/O current injection susceptibility. 3. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. 4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order). Table 44. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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