MRF166 MRF166C

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

V(BR)DSS

65

—

—

V

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

IDSS

—

—

1.0

mA

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0 V)

IGSS

—

—

1.0

µA

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

VGS(th)

1.0

3.0

6.0

V

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

gfs

600

800

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Ciss

—

30

—

pF

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Coss

—

35

—

pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Crss

—

4.5

—

pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)

NF

—

2.5

—

dB

MRF166C

Common Source Power Gain

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

Gps

14

17

—

dB

Drain Efficiency

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

η

50

55

—

%

Electrical Ruggedness

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,

Load VSWR 30:1 at All Phase Angles)

ψ

No Degradation in Output Power

MRF166

Common Source Power Gain

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Gps

15

19

—

dB

Drain Efficiency

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

η

55

65

—

%

Electrical Ruggedness

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA,

Load VSWR 30:1 at All Phase Angles)

ψ

No Degradation in Output Power

Series Equivalent Input Impedance

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Zin

—

3.99 – j12.2

—

Ohms

Series Equivalent Output Impedance

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Zout

—

14.15 – j6.51

—

Ohms