July 11,2013-REV.00

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

20

-

-

V

Gate Threshold Voltage

0.7

0.8

1.1

V

Drain-Source On-State Resistance

-

116

150

mΩ

-

160

215

-

280

400

Zero Gate Voltage Drain Current

-

0.01

1

uA

Gate-Source Leakage Current

-

+2

+10

uA

Dynamic

Total Gate Charge

(Note 1,2)

-

1.6

-

nC

Gate-Source Charge

-

0.31

-

Gate-Drain Charge

-

0.41

-

Input Capacitance

Ciss

f=1.0MHZ

-

105

-

pF

Output Capacitance

Coss

-

25

-

Reverse Transfer Capacitance

Crss

-

15

-

Switching

Turn-On Delay Time

(Note 1,2)

-

5.8

-

ns

Turn-On Rise Time

tr

25.8

-

Turn-Off Delay Time

42

-

Turn-Off Fall Time

tf

-

32

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

1

A

Diode Forward Voltage

0.92

1.2

V

NOTES:

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

4.

The maximum current rating is package limited