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NP40N10PDF датащи(PDF) 3 Page - Renesas Technology Corp

номер детали NP40N10PDF
подробное описание детали  100 V ??40 A ??N-channel Power MOS FET Application: Automotive
PDF  11 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP40N10PDF датащи(HTML) 3 Page - Renesas Technology Corp

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NP40N10YDF, NP40N10VDF, NP40N10PDF
Preliminary
R07DS0361EJ0201 Rev.2.01
Page 3 of 9
May 13, 2013
Electrical Characteristics (TA = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero Gate Voltage Drain Current
IDSS
1
μA
VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS
±100
nA
VGS =
±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
1.5
2.0
2.5
V
VDS = VGS, ID = 250
μA
Forward Transfer Admittance ∗
1
| yfs |
20
40
S
VDS = 5.0 V, ID = 20 A
Drain to Source
On-state
Resistance ∗
1
NP40N10YDF
RDS(on)1
21
25
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
30
m
Ω
VGS = 5.0 V, ID = 20 A
RDS(on)3
24
36
m
Ω
VGS = 4.5 V, ID = 20 A
NP40N10VDF
RDS(on)1
21
26
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
31
m
Ω
VGS = 5.0 V, ID = 20 A
RDS(on)3
24
37
m
Ω
VGS = 4.5 V, ID = 20 A
NP40N10PDF
RDS(on)1
21
27
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
32
m
Ω
VGS = 5.0 V, ID = 20 A
RDS(on)3
24
38
m
Ω
VGS = 4.5 V, ID = 20 A
Input Capacitance
Ciss
2100
3150
pF
VDS = 25 V,
Output Capacitance
Coss
200
300
pF
VGS = 0 V,
Reverse Transfer Capacitance
Crss
80
144
pF
f = 1 MHz
Turn-on Delay Time
td(on)
15
33
ns
VDD = 50 V, ID = 20 A,
Rise Time
tr
16
40
ns
VGS = 10 V,
Turn-off Delay Time
td(off)
60
120
ns
RG = 0
Ω
Fall Time
tf
5
13
ns
Total Gate Charge
QG
47
71
nC
VDD = 80 V,
VGS = 10 V,
ID = 40 A
Gate to Source Charge
QGS
8
nC
Gate to Drain Charge
QGD
12
nC
Body Diode Forward Voltage ∗
1
VF(S-D)
0.9
1.5
V
IF = 40 A, VGS = 0 V
Reverse Recovery Time
trr
67
ns
IF = 40 A, VGS = 0 V,
di/dt = 100 A/
μs
Reverse Recovery Charge
Qrr
162
nC
Note:
*1. Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20 → 0 V
PG.
RG = 25 Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
Duty Cycle
≤ 1%
τ = 1 μs
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
V
DS
ton
toff
td(on)
tr
td(off)
tf
10%
10%



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