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CSD18532NQ5B датащи(PDF) 4 Page - Texas Instruments

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номер детали CSD18532NQ5B
подробное описание детали  60-V, N-Channel NexFET??Power MOSFETs
PDF  12 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD18532NQ5B датащи(HTML) 4 Page - Texas Instruments

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1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 25A
TC = 125ºC Id = 25A
G001
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
Qg - Gate Charge (nC)
ID = 25A
VDS = 30V
G001
10
100
1000
10000
100000
0
10
20
30
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0
20
40
60
80
100
120
140
160
180
200
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VDS - Drain-to-Source Voltage (V)
VGS = 10V
VGS = 8V
VGS = 6V
G001
0
20
40
60
80
100
120
140
160
180
200
0
1
2
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD18532NQ5B
SLPS440 – JUNE 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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Product Folder Links: CSD18532NQ5B



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