MGSF1N03L datasheet(3/5 Pages) ETC1

номер детали	MGSF1N03L

подробное описание детали	Power MOSFET 30 V, 2.1 A, Single N?묬hannel, SOT??3

PDF	5 Pages

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производитель	ETC1 [List of Unclassifed Manufacturers]

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MGSF1N03L, MVGSF1N03L

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 3. On−Resistance versus Drain Current

Figure 4. On−Resistance versus Drain Current

Figure 5. On−Resistance Variation with Temperature

0.001

0.1

Figure 6. Gate Charge

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

0.1

0.2

0.3

0.9

0.01

0.4

Figure 8. Capacitance

VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)

412

Ciss

Coss

Crss

350

VGS = 0 V

f = 1 MHz

TJ = 25°C

0.5

0.6

0.7

0.8

0.2

0.4

0.6

0.8

0.04

0.14

ID, DRAIN CURRENT (AMPS)

°C

VGS = 4.5 V

0.09

0.1

0.3

0.5

0.7

150

°C

-55

°C

0.9

0.24

0.19

0.4

0.8

1.2

1.6

0.04

0.1

0.12

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

0.08

0.06

0.14

0.2

0.6

1.4

1.8

°C

150

°C

-55

°C

0.8

TJ, JUNCTION TEMPERATURE (°C)

VGS = 10 V

ID = 2 A

-55

100

150

0.2

0.4

0.6

1.2

1.4

1.6

VGS = 4.5 V

ID = 1 A

QT, TOTAL GATE CHARGE (pC)

1000

6000

VDS = 24 V

TJ = 25°C

2000

ID = 2.0 A

3000

5000

4000

TJ = 150°C

-55

°C

0.16

1.8

-25

125

100

150

200

250

300

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