IXTP3N100P datasheet(1/4 Pages) IXYS

номер детали	IXTP3N100P

подробное описание детали	Polar VHVTM Power MOSFET N-Channel Enhancement Mode

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C3

A

I

DM

T

C = 25°C, pulse width limited by TJM

6A

I

A

T

C = 25°C3

A

E

AR

T

C = 25°C20

mJ

E

AS

T

C = 25°C

200

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

125

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99767(08/07)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±50 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

4.8

Ω

Polar VHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packages

Unclamped Inductive Switching

(UIS) rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-263 (I

XTA)

G

S

(TAB)

IXTA3N100P

IXTH3N100P

IXTP3N100P

V

DSS

= 1000V

I

D25

=

3A

R

DS(on) ≤

≤≤≤≤

4.8

Ω

TO-220 (I

XTP)

D

(TAB)

G

S

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor controls

Robotics and servo controls

TO-247 (IXTH)

G

D S

(TAB)

Аналогичный номер детали - IXTP3N100P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTP3N100P	336Kb / 7P	N-Channel Enhancement Mode Power MOSFET

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IXTP3N100P датащи(PDF) 1 Page - IXYS Corporation

IXTP3N100P датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTP3N100P

Аналогичное описание - IXTP3N100P

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