IXTH10P50P datasheet(1/6 Pages) IXYS

номер детали	IXTH10P50P

подробное описание детали	PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PDF	6 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 500

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 10

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 30

A

I

A

T

C = 25°C

- 10

A

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-3P,TO-220 & TO-247)

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-3P

5.5

g

TO-247

6.0

g

DS99911C(12/12)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 500

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.0

- 4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 10

μA

T

J = 125°C

- 250

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

1

Ω

PolarPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA10P50P

IXTP10P50P

IXTQ10P50P

IXTH10P50P

V

DSS

= - 500V

I

D25

= - 10A

R

DS(on) ≤

≤≤≤≤

1

Ω

TO-263 AA (IXTA)

G

S

D (Tab)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-3P (IXTQ)

D

G

S

D (Tab)

TO-220AB (IXTP)

D (Tab)

S

D

G

Features

International Standard Packages

Avalanche Rated

Rugged PolarPTM Process

Low Package Inductance

Fast Intrinsic Diode

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Аналогичный номер детали - IXTH10P50P

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXTH10P50P	342Kb / 2P	isc P-Channel MOSFET Transistor

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