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IXTH30N60P датащи(PDF) 1 Page - IXYS Corporation

номер детали IXTH30N60P
подробное описание детали  PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
PDF  6 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH30N60P датащи(HTML) 1 Page - IXYS Corporation

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© 2006 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99251E(12/05)
PolarHVTM
Power MOSFET
V
DSS
= 600
V
I
D25
=30
A
R
DS(on) ≤
≤≤≤≤ 240 m Ω
Ω
Ω
Ω
Ω
N-Channel Enhancement Mode
Avalanche Rated
Features
l Fast Recovery diode
l Unclamped Inductive Switching (UIS)
rated
l International standard packages
l Low package inductance
- easy to drive and to protect
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25° C to 150° C
600
V
V
DGR
T
J = 25° C to 150° C; RGS = 1 MΩ
600
V
V
GSS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25° C30
A
I
DM
T
C = 25° C, pulse width limited by TJM
80
A
I
AR
T
C = 25° C30
A
E
AR
T
C = 25° C50
mJ
E
AS
T
C = 25° C
1.5
J
dv/dt
I
S
≤I
DM, di/dt ≤100 A/µs, VDD ≤VDSS,
10
V/ns
T
J ≤150° C, RG = 4 Ω
P
D
T
C = 25° C
540
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
° C
T
SOLD
Plastic body for 10 s
260
° C
M
d
Mounting torque
(TO-3P, TO-247)
1.13/10 Nm/lb.in.
F
C
Mounting force
(PLUS220)
11..65/2.5..15
N/lb.
Weight
TO-247
6.0
g
TO-3P
5.5
g
PLUS220
4.0
g
TO-268
5.0
g
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
TO-268 (IXTT)
G
S
D (TAB)
PLUS220 (IXTV)
TO-247 (IXTH)
G
D
S
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J = 25° C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0 V, ID = 250 µA
600
V
V
GS(th)
V
DS = VGS, ID = 250µA
3.0
5.0
V
I
GSS
V
GS = ±30 V, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
25
µA
V
GS = 0 V
T
J = 125° C
250
µA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
240
m
Ω
Pulse test, t
≤300 µs, duty cycle d ≤ 2 %
G
D
S
D (TAB)
PLUS220 (IXTV...S)
G
S
D
D (TAB)
G
S
D (TAB)


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