IXTH50N30 datasheet(1/4 Pages) IXYS

номер детали	IXTH50N30

подробное описание детали	Advance Technical Information High Current Power MOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

300

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

300

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C50

A

I

DM

T

C = 25°C, pulse width limited by TJM

200

A

I

AR

T

C = 25°C50

A

E

AR

T

C = 25°C50

mJ

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

5

g

TO-247 (IXTH)

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

DS99011A(08/03)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

300

V

GS(th)

V

DS = VGS, ID = 250µA

2.0

4.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J =

25

°C25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

65

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

High Current

Power MOSFET

IXTH 50N30

V

DSS

= 300

V

IXTT 50N30

I

D25

=

50

A

R

DS(on)

=

65 m

Ω

Advance Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-268 (IXTT)

G

S

D (TAB)

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