IXTH75N15 datasheet(1/5 Pages) IXYS

номер детали	IXTH75N15

подробное описание детали	High Current Power MOSFET N-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

150

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

150

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C75

A

I

DM

T

C = 25°C, pulse width limited by TJM

300

A

I

AR

T

C = 25°C75

A

E

AR

T

C = 25°C60

mJ

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

330

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247 AD

6

g

TO-268

4

g

TO-247 AD (IXTH)

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

DS98948C(05/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

150

V

GS(th)

V

DS = VGS, ID = 250µA

2.0

4.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J =

25

°C25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

23

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-268

(IXTT)

(TAB)

G

S

High Current

Power MOSFET

IXTH 75N15

V

DSS

= 150

V

IXTT 75N15

I

D25

=

75

A

R

DS(on)

=

23 m

Ω

N-Channel Enhancement Mode

Features

International standard packages

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

Аналогичный номер детали - IXTH75N15

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXTH75N15	380Kb / 2P	isc N-Channel MOSFET Transistor

More results

Аналогичное описание - IXTH75N15

производитель	номер детали	датащи	подробное описание детали
Advanced Power Technolo...	APT10M11JVFR	121Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
GTM CORPORATION	G2N7002K	368Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G111K	366Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G138	324Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G301K	296Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2304A	371Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2308E	330Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE20N03	296Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE40N03	251Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE50L02	258Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

More results

IXTH75N15 датащи(PDF) 1 Page - IXYS Corporation

IXTH75N15 датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTH75N15

Аналогичное описание - IXTH75N15

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL