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STM32F407IGH6 датащи(PDF) 100 Page - STMicroelectronics |
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STM32F407IGH6 датащи(HTML) 100 Page - STMicroelectronics |
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100 / 185 page ![]() Electrical characteristics STM32F405xx, STM32F407xx 100/185 DocID022152 Rev 4 Low-speed internal (LSI) RC oscillator Figure 34. ACCLSI versus temperature 5.3.10 PLL characteristics The parameters given in Table 35 and Table 36 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 14. 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Based on characterization, not tested in production. 3. Guaranteed by design, not tested in production. Table 34. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA MS19013V1 -40 -30 -20 -10 0 10 20 30 40 50 -45 -35 -25 -15 -5 5 152535455565758595 105 Temperat ure (°C) max avg min |
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