© Semiconductor Components Industries, LLC, 2013

June, 2013 − Rev. 10

1

Publication Order Number:

BAS16HT1/D

BAS16H, SBAS16H

Switching Diode

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

100

Vdc

Peak Forward Current

200

mAdc

Non−Repetitive Peak Forward Surge

Current, 60 Hz

500

mAdc

Non−Repetitive Peak Forward Current

surge)

t = 1 ms

t = 10 ms

t = 100 ms

t = 1 ms

t = 1 s

36.0

18.0

6.0

3.0

0.7

A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

(Note 1)

Derate above 25°C

200

1.57

mW

mW/°C

Thermal Resistance Junction to Ambient

635

°C/W

Junction and Storage Temperature

−55 to

150

°C

1. FR-4 Minimum Pad.

http://onsemi.com

SOD−323

CASE 477

STYLE 1

MARKING DIAGRAM

1

CATHODE

2

ANODE

A6 = Specific Device Code

M

= Date Code

Device

Package

Shipping†

ORDERING INFORMATION

BAS16HT1G

SOD−323

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

2

A6 M

SBAS16HT1G

SOD−323

(Pb−Free)

3000 /T ape & Reel

SBAS16HT3G

SOD−323

(Pb−Free)

10000 / Tape & Reel