MPSW13 MPSW14

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

MPSW13

MPSW14

(IC = 100 mAdc, VCE = 5.0 Vdc)

MPSW13

MPSW14

hFE

5,000

10,000

10,000

20,000

—

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 0.1 mAdc)

VCE(sat)

—

1.5

Vdc

Base–Emitter On Voltage

(IC = 100 mAdc, VCE = 5.0 Vdc)

VBE(on)

—

2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(2)

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

125

—

MHz

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

2. fT = |hfe| • ftest.

500

5.0

IC, COLLECTOR CURRENT (mA)

200 k

100 k

70 k

IB, BASE CURRENT (mA)

5.0

50

2.0

1.0

0.5

50 k

20 k

30

10

20

100

200

10

20

0.5 1.0 2.0

1.5

2.5

3.0

0.1

0.2

100

TJ = 125°C

TJ = 25°C

IC =

50 mA

IC =

10 mA

IC =

500 mA

IC =

250 mA

1.5

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0 k

2.0 k

1.0 k

500

200

20

2.0

5.0

30

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

10

TA = 25°C

TC = 25°C

1.0 ms

1.0 s

100

ms

Figure 1. Active Region — Safe Operating

Area

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

7.0

70

50

300

10 k

7.0 k

5.0 k

2.0 k

30 k

3.0 k

VCE = 5.0 V

–55

°C

25

°C

500

200

1000

DUTY CYCLE

≤ 10%