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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SST38VF6401B датащи(PDF) 21 Page - Microchip Technology |
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SST38VF6401B датащи(HTML) 21 Page - Microchip Technology |
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21 / 58 page  2013 Microchip Technology Inc. Preliminary DS25002B-page 21 SST38VF6401B / SST38VF6402B / SST38VF6403B / SST38VF6404B TABLE 5-5: SYSTEM INTERFACE INFORMATION FOR SST38VF6401B/6402B/6403B/6404B Address Data Description 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min. (00H = no VPP pin) 1EH 0000H VPP max. (00H = no VPP pin) 1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs) 20H 0003H Typical time out for min. size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Block-Erase 2N ms (24 = 16 ms) 22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs) 24H 0003H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms) TABLE 5-6: DEVICE GEOMETRY INFORMATION FOR SST38VF6401B/6402B/6403B/6404B Address Data Description 27H 0017H Device size = 2N Bytes (17H = 23; 223 = 8 MByte) 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0005H Maximum number of bytes in multi-byte write = 2N (00H = not supported) 2BH 0000H 2CH 000xH Number of Erase Block regions in the device (01H = uniform boot device, 02H = non-uniform boot device. 2DH 00xxH Erase Block Region 1 Information 007FH, 0000H, 0000H, 0001H, for SST38VF6401B/6402B 0007H, 0000H, 0020H, 0000H for SST38VF6403B/6404B 2EH 000xH 2FH 00x0H 30H 000xH 31H Erase Block Region 2 Information 0000H, 0000H, 0000H, 0000H, for SST38VF6401B/6402B 007EH, 0000H, 0000H, 0001H for SST38VF6403B/6404B 32H 33H 34H |
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