TSM4NB50 datasheet(2/7 Pages) TSC

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TSM4NB50

500V N-Channel Power MOSFET

2/7

Version: A12

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

500

Drain-Source On-State Resistance

VGS = 10V, ID = 1.5A

RDS(ON)

2.3

2.7

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.5

3.5

4.5

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±10

Forward Transconductance

VDS = 10V, ID = 1.5A

gfs

Dynamic

Total Gate Charge

VDS = 300V, ID = 3A,

VGS = 10V

7.6

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

3.8

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

327

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

VGS = 10V, ID = 3A,

VDD = 300V, RG = 4.7Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source Drain Diode

Source Drain Current

ISD

Diode Forward Voltage

IS = 3A, VGS = 0V

VSD

0.9

1.5

Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

Note 2: VDD = 50V, IAS=2A, L=50mH, RG =25Ω, Starting TJ=25ºC

Note 3: ISD≤3A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC

Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%

Note 5: Essentially Independent of Operating Temperature

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