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STM32F100VCT6 датащи(PDF) 52 Page - STMicroelectronics

номер детали STM32F100VCT6
подробное описание детали  High-density value line, advanced ARM-based 32-bit MCU with 256 to 512 KB Flash, 16 timers, ADC, DAC & 11 comm interfaces
PDF  98 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F100VCT6 датащи(HTML) 52 Page - STMicroelectronics

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Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
52/98
Doc ID 15081 Rev 7
Figure 14.
Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 9.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
ai14129b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F10xxx
32.768 KH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 24.
HSI oscillator characteristics(1)
1.
VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI
Accuracy of HSI oscillator
TA = –40 to 105 °C
(2)
2.
Based on characterization, not tested in production.
-2.4
2.5
%
TA = –10 to 85 °C
(2)
-2.2
1.3
%
TA = 0 to 70 °C
(2)
-1.9
1.3
%
TA = 25 °C
-1
1
%
tsu(HSI)
(3)
3.
Guaranteed by design. Not tested in production
HSI oscillator startup time
1
2
µs
IDD(HSI)
(3) HSI oscillator power consumption
80
100
µA
Table 25.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
Frequency
30
40
60
kHz
tsu(LSI)
(2)
2.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
µs
IDD(LSI)
(2)
LSI oscillator power consumption
0.65
1.2
µA



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