Data Sheet

Page 10-17

Ratingsat

25 Deg. C ambient

temperature

unless otherwise

specified.

Single Phase Half

Wave, 60 Hz

Resistive or

Inductive Load.

For Capacitive

Load, Derate

Current by 20%.

LEADLESS CHIP SIGNAL DIODE

High Speed Switching

Relative capacitance versus

reverse voltage

0.7

0.8

0.9

1

1.1

02

4

6

8

10

Tj = 25C

f = 1MHz

Forward Characteristics

0.01

0.1

1

10

100

1000

01

2

Dynamic forward resistance versus

forward current

1

10

100

1000

10000

0.01

0.1

1

10

100

Admissable power dissipation

versus ambient temperature

Valid provided that leads at a distance of

8mm from case are kept at ambient

temperature

0

100

200

300

400

500

600

700

800

0

50

100

150

200

Leakage current versus junction

temperature

1

10

100

1000

10000

0100

200

Admissable repetitive peak forward current versus pulse duration

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10