1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

MAXIMUM RATINGS

Rating

Symbol

NPN

PNP

Unit

Collector – Emitter Voltage

MPS6520, MPS6521

MPS6523

VCEO

25

—

—

25

Vdc

Collector – Base Voltage

MPS6520, MPS6521

MPS6523

VCBO

40

—

—

25

Vdc

Emitter – Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

(Printed Circuit Board Mounting)

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 0.5 mAdc, IB = 0)

V(BR)CEO

25

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

MPS6520, MPS6521

(VCB = 20 Vdc, IE = 0)

MPS6523

ICBO

—

—

0.05

0.05

mAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPS6520/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

NPN

MPS6520

MPS6521

PNP

MPS6523

*Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

*

Voltage and current are negative

for PNP transistors

COLLECTOR 3

2

BASE

1 EMITTER

COLLECTOR 3

2

BASE

1 EMITTER