BLF2425M7LS140 datasheet(5/11 Pages) NXP

номер детали	BLF2425M7LS140

подробное описание детали	Power LDMOS transistor

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BLF2425M7L140; BLF2425M7LS140

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 6 September 2012

5 of 11

NXP Semiconductors

BLF2425M7L(S)140

Power LDMOS transistor

7.4 Graphical data

Table 9.

List of components

For test circuit see Figure 2.

Component

Description

Value

Remarks

C1, C4, C5

multilayer ceramic chip capacitor

15 pF

ATC100B

C2, C6

multilayer ceramic chip capacitor

F, 50 V

Murata

multilayer ceramic chip capacitor

100 nF

Murata

multilayer ceramic chip capacitor

62 pF

ATC100B

electrolytic capacitor

F, 63 V

resistor



SMD 0805; Bourns

VDS = 28 V; IDq = 1300 mA.

(1) Gp at f = 2400 MHz

(2) Gp at f = 2450 MHz

(3) Gp at f = 2500 MHz

(4)



D at f = 2400 MHz

(5)



D at f = 2450 MHz

(6)



D at f = 2500 MHz

VDS = 28 V; IDq = 1300 mA.

(1) Gp at f = 2400 MHz

(2) Gp at f = 2450 MHz

(3) Gp at f = 2500 MHz

(4)



D at f = 2400 MHz

(5)



D at f = 2450 MHz

(6)



D at f = 2500 MHz

Fig 3.

Power gain and drain efficiency as function of

load power; typical values

Fig 4.

Power gain and drain efficiency as function of

load power; typical values

DDD

3/ G%P

*SSS

DDD

3/ :

*SSS

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