AM7530C

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM7530_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

P & N-Channel 30-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol N-Channel P-Channel Units

30

-30

8

-8

o

C

6.4

-4.6

o

C

5.2

-3.8

±20

±20

2.9

-2.9

A

o

C

3.5

3.5

o

C

2.2

2.2

-55 to 150

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

6.4

5.4

-4.6

-3.7

30

PRODUCT SUMMARY

-30

Symbol

Maximum

Units

t <= 10 sec

35

o

C/W

Steady State

85

o

C/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

S

2

D2

G

2

P-Channel MOSFET

D1

S

1

G

1

N-Channel MOSFET

S1

G1

S2

G2

1

2

3

4

SOIC-8PP

Top View

D1

D1

D2

D2

8

7

6

5