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AM8958C датащи(PDF) 1 Page - Analog Power |
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AM8958C датащи(HTML) 1 Page - Analog Power |
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1 / 8 page ![]() 1 AM8958C Analog Power September, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM8958_F These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. VDS (V) rDS(on) m(Ω)ID (A) 40 @ VGS = 4.5V 6.0 29 @ VGS = 10V 7.0 80 @ VGS = -4.5V -4.0 52 @ VGS = -10V -5.2 32 PRODUCT SUMMARY -32 P & N-Channel 32-V (D-S) MOSFET •Low r DS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SO-8 Surface Mount Package Saves Board Space • High power and current handling capability • Low side high current DC-DC Converter applications Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 Symbol N-Channel P-Channel Units VDS 32 -32 VGS ±20 ±20 TA=25 oC 7 -5.2 TA=70 oC 5.6 -6.8 IDM 20 -20 IS 1.3 -1.3 A TA=25 oC 2.1 2.1 TA=70 oC1.3 1.3 TJ, Tstg oC Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 40 oC/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 60 oC/W THERMAL RESISTANCE RATINGS Parameter |
Аналогичный номер детали - AM8958C |
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Аналогичное описание - AM8958C |
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