MPIC2113

5

Motorola TMOS Power MOSFET Transistor Device Data

PACKAGE DIMENSIONS

CASE 646–06

ISSUE L

NOTES:

1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE

POSITION AT SEATING PLANE AT MAXIMUM

MATERIAL CONDITION.

2. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

3. DIMENSION B DOES NOT INCLUDE MOLD

FLASH.

4. ROUNDED CORNERS OPTIONAL.

1

7

14

8

B

A

F

H

G

D

K

C

N

L

J

M

SEATING

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

A

0.715

0.770

18.16

19.56

B

0.240

0.260

6.10

6.60

C

0.145

0.185

3.69

4.69

D

0.015

0.021

0.38

0.53

F

0.040

0.070

1.02

1.78

G

0.100 BSC

2.54 BSC

H

0.052

0.095

1.32

2.41

J

0.008

0.015

0.20

0.38

K

0.115

0.135

2.92

3.43

L

0.300 BSC

7.62 BSC

M

0

10

0

10

N

0.015

0.039

0.39

1.01

_

_

_

_

CASE 751G–02

ISSUE A

DIM

MIN

MAX

MIN

MAX

INCHES

MILLIMETERS

A

10.15

10.45

0.400

0.411

B

7.40

7.60

0.292

0.299

C

2.35

2.65

0.093

0.104

D

0.35

0.49

0.014

0.019

F

0.50

0.90

0.020

0.035

G

1.27 BSC

0.050 BSC

J

0.25

0.32

0.010

0.012

K

0.10

0.25

0.004

0.009

M

0

7

0

7

P

10.05

10.55

0.395

0.415

R

0.25

0.75

0.010

0.029

M

B

M

0.010 (0.25)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER

SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN

EXCESS OF D DIMENSION AT MAXIMUM

MATERIAL CONDITION.

–A–

–B–

P

8X

G

14X

D

16X

SEATING

PLANE

–T–

S

A

M

0.010 (0.25)

T

16

9

8

1

F

J

_

_

_

_

_

M

C

K