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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM3531C датащи(PDF) 1 Page - Analog Power |
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AM3531C датащи(HTML) 1 Page - Analog Power |
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1 / 3 page  1 AM3531C PRELIMINARY Publication Order Number: DS-AM3531_D Analog Power These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N & P-Channel 30-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe TSOP-6 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VDS (V) rDS(on) (Ω)ID (A) 0.058 @ VGS = 4.5V 3.7 0.082 @ VGS = 2.5V 3.1 0.112 @ VGS = -4.5V -2.7 0.172 @ VGS = -2.5V -2.2 30 PRODUCT SUMMARY -26.5 Symbol N-Channel P-Channel Units VDS 30 -26.5 VGS ±12 ±12 TA=25 oC 3.7 -2.7 TA=70 oC2.9 -2.1 IDM 8 -8 IS 1.05 -1.05 A TA=25 oC TA=70 oC TJ, Tstg oC Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W 1.15 0.7 -55 to 150 Typ Max Typ Max t <= 10 sec 93 110 93 110 Steady State 130 150 130 150 Maximum Junction-to-Ambient a oC/W Unit P-Channel N-Channel RthJA THERMAL RESISTANCE RATINGS Parameter Symbol S 2 D 2 G 2 P-Channel MOSFET D 1 S 1 G 1 N-Channel MOSFET TSOP-6 Top View D1 S1 D2 G1 S2 G2 1 2 3 6 5 4 |
Аналогичный номер детали - AM3531C |
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Аналогичное описание - AM3531C |
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