1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TMOS Switching

N–Channel — Enhancement

MAXIMUM RATINGS

Rating

Symbol

MPF930

MPF960

MPF990

Unit

Drain – Source Voltage

VDS

35

60

90

Vdc

Drain – Gate Voltage

VDG

35

60

90

Vdc

Gate–Source Voltage

— Continuous

— Non–repetitive (tp ≤ 50 µs)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current

Continuous(1)

Pulsed(2)

ID

IDM

2.0

3.0

Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance

θJA

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

MPF930

MPF960

MPF990

V(BR)DSX

35

60

90

—

—

—

—

—

—

Vdc

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

IGSS

—

—

50

nAdc

ON CHARACTERISTICS(2)

Zero–Gate–Voltage Drain Current

(VDS = Maximum Rating, VGS = 0)

IDSS

—

—

10

µAdc

Gate Threshold Voltage

(ID = 1.0 mAdc, VDS = VGS)

VGS(Th)

1.0

—

3.5

Vdc

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 0.5 Adc)

MPF930

MPF960

MPF990

(ID = 1.0 Adc)

MPF930

MPF960

MPF990

(ID = 2.0 Adc)

MPF930

MPF960

MPF990

VDS(on)

—

—

—

—

—

—

—

—

—

0.4

0.6

0.6

0.9

1.2

1.2

2.2

2.8

2.8

0.7

0.8

1.2

1.4

1.7

2.4

3.0

3.5

4.8

Vdc

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

Order this document

by MPF930/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPF930

MPF960

MPF990

CASE 29–05, STYLE 22

TO–92 (TO–226AE)

1

2

3

3 DRAIN

1 SOURCE

2

GATE

REV 2