AM3443P datasheet(1/5 Pages) ANALOGPOWER

номер детали	AM3443P

подробное описание детали	P-Channel 20-V (D-S) MOSFET

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производитель	ANALOGPOWER [Analog Power]

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AM3443P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM3443_G

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on)m(OHM)

ID(A)

65 @ VGS= -4.5V

-4.5

100 @ VGS= -2.5V

-4.2

150 @ VGS= -1.8V

-3.1

PRODUCT SUMMARY

-20

P-Channel 20-V (D-S) MOSFET

•

Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

VDS

-20

VGS

±12

TA=25

o

C

-4.5

TA=70

o

C

-3.6

IDM

±20

IS

-1.7

A

TA=25

o

C

2.0

TA=70

o

C

1.3

TJ, Tstg

-55 to 150

o

C

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parame ter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

62.5

oC/W

110

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

t <= 5 sec

R?JA

1

2

3

4

5

6

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