MPF102

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2.0

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

0

10

2.0

4.0

6.0

8.0

0

4.0

6.0

8.0

10

12

14

ID = 5.0 mA

100 MHz

VDS = 15 Vdc

f1 = 399 MHz

f2 = 400 MHz

2.0

ID, DRAIN CURRENT (mA)

1.5

6.5

2.5

3.5

4.5

5.5

0

4.0

6.0

8.0

10

12

14

Figure 3. Effects of Drain–Source Voltage

Figure 4. Effects of Drain Current

NOISE FIGURE

(Tchannel = 25°C)

Pin, INPUT POWER PER TONE (dB)

+40

Figure 5. Third Order Intermodulation Distortion

16

18

20

f = 400 MHz

f = 400 MHz

100 MHz

VDS = 15 V

VGS = 0 V

+20

0

–20

–40

–60

–80

– 100

– 120

– 140

– 160

– 120

– 100

– 80

– 60

– 40

– 20

0

+ 20

3RD ORDER INTERCEPT

FUNDAMENTAL

OUTPUT @ IDSS,

0.25 IDSS

3RD ORDER IMD

OUTPUT @ IDSS,

0.25 IDSS

INTERMODULATION CHARACTERISTICS