LMBD301LT3G datasheet(1/3 Pages) LRC

номер детали	LMBD301LT3G

подробное описание детали	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes

PDF	3 Pages

Scroll/Zoom	100%

производитель	LRC [Leshan Radio Company]

домашняя страница	http://www.lrc.cn/

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1 / 3 page

MAXIMUM RATINGS(TJ=125°C unless otherwise noted)

Rating

symbol

value

unit

Reverse Voltage

V R

30

Volts

Forward Power Dissipation

P F

@TA=25 °C

280

200

mW

Derate above 25 °C

2.8

2.0

mW/ °C

Operating Junction

T J

°C

Temperature Range

–55 to +125

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

LMBD301LT1G= 4T

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

M a x

Unit

Reverse Breakdown Voltage(IR=10

µA)

V (BR)R

30

—

Volts

Total Capacitance(VR=15V,f=1.0MHz,)Figure1

C T

—

0.9

1.5

pF

Reverse Leakage(VR=25V)Figure3

I R

—

13

200

nAdc

Forward Voltage(IF=1.0mAdc)Figure4

V F

—

0.38

0.45

Vdc

Forward Voltage(IF=10mAdc)Figure4

V F

—

0.52

0.6

Vdc

NOTE:LMBD301LT1G is also available in bulk packaging.Use LMBD301LT1G as the device title to order this device in bulk.

Silicon Hot–Carrier Diodes

Schottky Barrier Diodes

3

CATHODE

1

ANODE

These devices are designed primarily for high–efficiency UHF and VHF detector

applications.They are readily adaptable to many other fast switching RF and digital

applications.They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements.They are also

available in a Surface Mount package.

•

EXtremely Low Minority Carrier Lifetime –15ps(Typ)

•

Very Low Capacitance –1.5pF(Max)@VR=15V

•

Low Reverse Leakage –I

R

=13 nAdc(Typ) LMBD301

1

3

2

SOT–23

LMBD301LT1G

•

LESHAN RADIO COMPANY, LTD.

Ordering Information

Device

Marking

Shipping

LMBD301LT1G

4T

3000/Tape&Reel

LMBD301LT3G

4T

10000/Tape&Reel

We declare that the material of product

compliance with RoHS requirements.

Rev.O 1/3

Аналогичный номер детали - LMBD301LT3G

производитель	номер детали	датащи	подробное описание детали
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
	LMBD301LT1G	119Kb / 3P	Silicon Hot?밅arrier Diodes
	LMBD301LT1G	119Kb / 3P	Silicon Hot?밅arrier Diodes

More results

Аналогичное описание - LMBD301LT3G

производитель	номер детали	датащи	подробное описание детали
Leshan Radio Company	MMBD301LT1	54Kb / 2P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Leshan Radio Company	LMBD301LT1	87Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	64Kb / 4P	Silicon Hot?묬arrier Diodes Schottky Barrier Diodes October, 2006 ??Rev. 4
Leshan Radio Company	LMBD301LT1G	110Kb / 3P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes
ON Semiconductor	MBD701	128Kb / 4P	Silicon Hot-Carrier Diodes Schottky Barrier Diodes March, 2009 ??Rev. 5
Leshan Radio Company	LMDL301T1G	135Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diode
	LMBD301LT1G	119Kb / 3P	Silicon Hot?밅arrier Diodes
	LMDL301T1G	135Kb / 3P	Silicon Hot?밅arrier Diodes
First Silicon Co., Ltd	FDR301	209Kb / 3P	Silicon Hot?밅arrier Diodes Schottky Barrier Diodes
First Silicon Co., Ltd	FDR301U	184Kb / 3P	Silicon Hot?밅arrier Diodes

More results

LMBD301LT3G датащи(PDF) 1 Page - Leshan Radio Company

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Аналогичный номер детали - LMBD301LT3G

Аналогичное описание - LMBD301LT3G

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