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AP4530GH датащи(PDF) 1 Page - Advanced Power Electronics Corp.

номер детали AP4530GH
подробное описание детали  Simple Drive Requirement, Good Thermal Performance
PDF  8 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4530GH датащи(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
40V
▼ Good Thermal Performance
RDS(ON)
32mΩ
▼ Fast Switching Performance
ID
7.4A
P-CH BVDSS
-40V
RDS(ON)
64mΩ
Description
ID
-5.5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current
3
7.4
-5.5
A
ID@TA=70℃
Continuous Drain Current
3
6.1
-4.4
A
IDM
Pulsed Drain Current
1
50
-50
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
10
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
40
℃
/W
Data and specifications subject to change without notice
Parameter
200904071-1/7
Thermal Data
AP4530GH
RoHS-compliant Product
3.125
0.025
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
S1
TO-252-4L
G1
S2
G2
D1/D2


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производительномер деталидатащиподробное описание детали
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