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IXTP56N15T датащи(PDF) 2 Page - IXYS Corporation |
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IXTP56N15T датащи(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTA56N15T IXTP56N15T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 28 A, Note 1 23 39 S C iss 2250 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 330 pF C rss 50 pF t d(on) Resistive Switching Times 16 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID = 28 A 17 n s t d(off) R G = 5 Ω (External) 43 n s t f 18 n s Q g(on) 34 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 25 A 10 nC Q gd 11 nC R thJC 0.50 °C/W R thCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 56 A I SM Pulse width limited by T JM 160 A V SD I F =25 A, VGS = 0 V, Note 1 1.1 V t rr I F = 25 A, -di/dt = 100 A/μs 100 n s V R = 50 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXTP) Outline PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 |
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