BC817/BC818

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

• Suitable for AF-Driver stages and low power output stages

• Complement to BC807/BC808

°°C)

°°C)

MARKING CODE

Characteristic

Symbol

Rating

Unit

Collector Emitter Voltage : BC817

: BC818

Collector Emitter Voltage : BC817

: BC818

Emitter-Base Voltage

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

50

30

45

25

5

800

310

150

-65 ~ 150

V

V

V

V

V

mA

mW

°C

°C

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

: BC817

: BC818

Collector-Emitter Breakdown Voltage

: BC817

: BC818

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Collector-Base Capacitance

f=50MHz

45

25

50

30

5

100

60

100

100

100

630

0.7

1.2

12

V

V

V

V

V

nA

nA

V

V

MHz

pF

Classification

16

25

40

100-250

160-400

250-630

60-

100-

170-

TYPE

817-16

817-25

817-40

818-16

818-25

818-40

MARKING

8FA

8FB

8FC

8GA

8GB

8GC

SOT-23

1. Base 2. Emitter 3. Collector

©1999 Fairchild Semiconductor Corporation

Rev. B