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ACE8601B датащи(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE8601B датащи(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 7 page ![]() ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 2 Ordering information ACE8601B XX + H Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.4 0.52 1 Gate Leakage Current IGSS VDS=0V,VGS=±8V 10 uA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Maximum Body-Diode Continuous Current IS 2.5 A Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=8A 16.2 21 m Ω VGS=2.5V, ID=7A 19.4 25 VGS=1.8V, ID=6A 24.4 33 Forward Transconductance gfs VDS=5V,ID=6.5A 13 S Diode Forward Voltage VSD ISD=2.5A, VGS=0V 0.67 1.6 V Switching Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=8A 13.8 17.94 nC Gate-Source Charge Qgs 4.1 5.33 Gate-Drain Charge Qgd 5.6 7.28 Turn-On Time td(on) VGS=5V, RL=1.5Ω, VDS=10V, RGEN=3Ω 6.2 12.4 nS tr 12.7 25.4 Turn-Off Time td(off) 51.7 103.4 tf 16 32 Dynamic Input Capacitance Ciss VGS=0V, VDS=10V, f=1MHz 1160 pF Output Capacitance Coss 104 REVERSE Transfer Capacitance Crss 29 NN : DFN3*3-8L Pb - free Halogen - free |
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