ACE4614B datasheet(2/9 Pages) ACE

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ACE4614B

30V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE4614B XX + H

N-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=10A

VGS=4.5V, ID=10A

16.5

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

1.4

Forward Transconductance

gFS

VDS=5V, ID=10A

Diode Forward Voltage

VSD

ISD=1A, VGS=0V

0.74

1.0

Maximum Body-Diode Continuous

Current

2.6

Switching

Total Gate Charge

VDS=15V, ID=10A

VGS=5V

7.65

9.95

Gate-Source Charge

Qgs

2.82

3.67

Gate-Drain Charge

Qgd

2.49

3.24

Turn-On Delay Time

Td(on)

VDS=15V,RGEN=6Ω,

VGS=10V

RL=15Ω

13.92

27.84

Turn-On Rise Time

2.64

5.28

Turn-Off Delay Time

td(off)

31.4

62.8

Turn-Off Fall Time

3.28

6.56

Dynamic

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

886.01

Output Capacitance

Coss

151

Reverse Transfer Capacitance

Crss

75.77

Note.

The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t

≤10s junction to ambient thermal resistance rating.

FM : SOP-8

Pb - free

Halogen - free

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