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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ACE4613B датащи(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE4613B датащи(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 6 page  ACE4613B Complementary Enhancement Mode Field Effect Transistor VER 1.2 2 Ordering information ACE4613B XX + H N-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 33 V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=7A 21 30 m Ω VGS=4.5V, ID=5A 34 40 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1 1.5 3 V Forward Transconductance gFS VDS=5V, ID=5A 7.3 S Diode Forward Voltage VSD IS=1A, VGS=0V 0.76 1 V Turn-On Delay Time Td(on) VDS=15V, VGS=10V RGEN=3Ω, RL=2.3Ω 4.5 18 ns Turn-Off Delay Time td(off) 19 70 Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 407 pF Output Capacitance Coss 113 Reverse Transfer Capacitance Crss 57 P-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA -30 -34 V Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-6A 27 35 m Ω VGS=-4.5V, ID=-5A 35 50 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA -1 -1.5 -3 V Forward Transconductance gFS VDS=-5V, ID=-4A 12 S Diode Forward Voltage VSD IS=-1A, VGS=0V -0.77 V Turn-On Delay Time Td(on) VDS=-15V, VGS=-10V RGEN=3Ω, RL=2.5Ω 8 18 ns Turn-Off Delay Time td(off) 22 70 Input Capacitance Ciss VDS=-15V, VGS=0V 950 pF FM : SOP-8 Pb - free Halogen - free |
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