ACE4612B datasheet(2/6 Pages) ACE

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ACE4612B

Complementary Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE4612B XX + H

N-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=24V, VGS=0V

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=5A

VGS=4.5V, ID=5A

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

1.5

Forward Transconductance

gFS

VDS=5V, ID=5A

7.3

Diode Forward Voltage

VSD

IS=1A, VGS=0V

0.76

Turn-On Delay Time

Td(on)

VDS=15V, VGS=10V

RGEN=3Ω, RL=2.3Ω

Turn-Off Delay Time

td(off)

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

407

Output Capacitance

Coss

113

Reverse Transfer Capacitance

Crss

P-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

-30

-36

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4A

VGS=-4.5V, ID=-3A

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

-1

-1.5

-3

Forward Transconductance

gFS

VDS=-5V, ID=-4A

Diode Forward Voltage

VSD

IS=-1A, VGS=0V

-0.8

Turn-On Delay Time

Td(on)

VDS=-15V, VGS=-10V

RGEN=3Ω, RL=2.5Ω

Turn-Off Delay Time

td(off)

FM : SOP-8

Pb - free

Halogen - free

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