ACE4442B datasheet(1/6 Pages) ACE

номер детали	ACE4442B

подробное описание детали	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4442B

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE4442B combines advanced trench MOSFET technology with a low resistance package to

provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,

Pagers.

Features

 V

DS=20V

 I

D=0.7A

 R

DS(ON)

<360

mΩ (V

GS=4.5V)

 R

DS(ON)

<420

mΩ (V

GS=2.5V)

 R

DS(ON)

<560

mΩ (V

GS=1.8V)

 ESD Protected

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25℃

ID

0.7

A

TA=70℃

0.56

Drain Current (Pulsed)

IDM

1

A

Power Dissipation

TA=25℃

PD

0.27

W

TA=70℃

0.16

Operating temperature / storage temperature

TJ/TSTG -55~150 ℃

Packaging Type

SOT-523

Аналогичный номер детали - ACE4442B

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE4440B	823Kb / 6P	N-Channel Enhancement Mode MOSFET VER 1.2
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Аналогичное описание - ACE4442B

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