ACE4441B datasheet(1/6 Pages) ACE

номер детали	ACE4441B

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4441B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE4441B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge. This device is suitable for use as a load switch or in PWM applications.

Features

 V

DS(V)=-60V

 I

D=-4A (VGS=-10V)

 R

DS(ON)＜75mΩ (VGS=-10V)

 R

DS(ON)＜90mΩ (VGS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

±20

V

Drain Current (Continuous) * AC

TA=25

OC

ID

-4

A

TA=70

OC

-3.2

Drain Current (Pulse) * B

IDM

-20

Power Dissipation

TA=25

OC

PD

3

W

TA=70

OC

2.1

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

Ordering information

ACE4441B XX + H

FM : SOP-8

Pb - free

Halogen - free

Аналогичный номер детали - ACE4441B

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE4440B	823Kb / 6P	N-Channel Enhancement Mode MOSFET VER 1.2
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Аналогичное описание - ACE4441B

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Аналогичный номер детали - ACE4441B

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