ACE1543B datasheet(2/5 Pages) ACE

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ACE1543B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE1543B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250 uA

-30

-34

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250uA

-1

-1.4

-3

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

100

Zero Gate Voltage Drain

Current

IDSS

VDS=-30V, VGS=0V

-1

Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-6A

VGS=-4.5V, ID=-4A

Forward Transconductance

gfs

VDS=-5V,ID=-6A

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.81

Switching

Total Gate Charge

VDS=-15V, VGS=-10V, ID=-4.9A

18.3

23.8

Gate-Source Charge

Qgs

2.4

3.2

Gate-Drain Charge

Qgd

3.1

4.1

Turn-On Time

td(on)

VGS=-10V, RGEN=6Ω, VDS=-15V,

RL=15Ω

12.4

24.8

Turn-Off Time

td(off)

41.1

82.2

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=-15V, f=1MHz

971.5

Output Capacitance

Coss

235.1

REVERSE Transfer

Capacitance

Crss

82.7

Note:

1. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

XM : SOT-223

Pb - free

Halogen - free

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