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STM32F407IG датащи(PDF) 77 Page - STMicroelectronics |
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STM32F407IG датащи(HTML) 77 Page - STMicroelectronics |
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77 / 167 page ![]() STM32F405xx, STM32F407xx Electrical characteristics Doc ID 022152 Rev 2 77/167 Figure 25. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) Table 22. Typical and maximum current consumptions in VBAT mode (1) Symbol Parameter Conditions Typ Max Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.8 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator and RTC ON 1.29 1.42 1.68 TBD(2) TBD(2) µA Backup SRAM OFF, low-speed oscillator and RTC ON 0.62 0.73 0.96 TBD(2) TBD(2) Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9(2) 16(2) Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5(2) 7(2) 1. TBD stands for “to be defined”. 2. Based on characterization, not tested in production. 0 0.5 1 1.5 2 2.5 3 3.5 0 102030405060708090 100 Temperature in (°C) 1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V |
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