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STF13NM60N датащи(PDF) 4 Page - STMicroelectronics

номер детали STF13NM60N
подробное описание детали  N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STF13NM60N датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF/I/P/U/W13NM60N
4/21
Doc ID 15420 Rev 5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage (VGS = 0)
ID = 1 mA
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±0.1
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
0.28
0.36
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
790
60
3.6
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
135
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 11 A,
VGS = 10 V,
(see Figure 20)
-
27
4
14
-
nC
nC
nC
RG
Gate input resistance
f=1 MHz open drain
-
4.7
-
Ω



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