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ST13003K датащи(PDF) 3 Page - STMicroelectronics

номер детали ST13003K
подробное описание детали  High voltage fast-switching NPN power transistor
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ST13003K датащи(HTML) 3 Page - STMicroelectronics

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ST13003-K
Electrical characteristics
Doc ID 13533 Rev 4
3/10
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 700 V
VCE = 700 V
TC = 125 °C
1
5
mA
mA
V(BR)EBO
Emitter-Base breakdown
voltage (IC = 0)
IE = 10 mA
9
18
V
VCEO(sus)
(1)
1.
Pulsed duration = 300 µs, duty cycle
≤ 1.5%
Collector-emitter
sustaining voltage (IB = 0)
IC = 10 mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.5 A
_ IB = 0.1 A
IC = 1 A
_ _ IB = 0.25 A
IC = 1.5 A _ _ IB = 0.5 A
0.5
1
1.5
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 0.5 A
_ IB = 0.1 A
IC = 1 A
_ _ IB = 0.25 A
1
1.2
V
V
hFE
DC current gain
IC = 0.5 A
VCE = 2 V
IC = 1 A
VCE = 2 V
8
5
20
25
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
VCC = 125 V
IC = 1 A
IB1 = 0.2 A
IB2 = - 0.2 A
Tp = 25 µs
1
4
0.7
µs
µs
µs
ts
Inductive load
Storage time
IC = 1 A
IB1 = 0.2 A
VBE = - 5 V
L = 50 mH
VClamp = 300 V
0.8
µs



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