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MCP2025-330E/P датащи(PDF) 13 Page - Microchip Technology |
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MCP2025-330E/P датащи(HTML) 13 Page - Microchip Technology |
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13 / 36 page ![]() 2012 Microchip Technology Inc. DS22306A-page 13 MCP2025 2.0 ELECTRICAL CHARACTERISTICS 2.1 Absolute Maximum Ratings† VIN DC Voltage on RXD, and RESET ................................................................................................. -0.3V to VREG+0.3 VIN DC Voltage on TXD, CS/LWAKE .............................................................................................................-0.3 to +40V VBB Battery Voltage, continuous, non-operating (Note 1)..............................................................................-0.3 to +40V VBB Battery Voltage, non-operating (LIN bus recessive, no regulator load, t < 60s) (Note 2) .......................-0.3 to +43V VBB Battery Voltage, transient ISO 7637 Test 1 ......................................................................................................-100V VBB Battery Voltage, transient ISO 7637 Test 2a .....................................................................................................+75V VBB Battery Voltage, transient ISO 7637 Test 3a ....................................................................................................-150V VBB Battery Voltage, transient ISO 7637 Test 3b ...................................................................................................+100V VLBUS Bus Voltage, continuous.......................................................................................................................-18 to +30V VLBUS Bus Voltage, transient (Note 3)............................................................................................................-27 to +43V ILBUS Bus Short Circuit Current Limit ....................................................................................................................200 mA ESD protection on LIN, VBB (IEC 61000-4-2) (Note 4).......................................................................................... ±15 kV ESD protection on LIN, VBB (Human Body Model) (Note 5).................................................................................... ±8 kV ESD protection on all other pins (Human Body Model) (Note 5) ............................................................................. ±4 kV ESD protection on all pins (Charge Device Model) (Note 6) ................................................................................±1500V ESD protection on all pins (Machine Model) (Note 7).............................................................................................±200V Maximum Junction Temperature............................................................................................................................. 150 C Storage Temperature ..................................................................................................................................-65 to +150 C Note 1: LIN 2.x compliant specification. 2: SAE J2602 compliant specification. 3: ISO 7637 immunity against transients (t < 500 ms). 4: According to IEC 61000-4-2, 330Ω, 150 pF and Transceiver EMC Test Specifications [2] to [4]. 5: According to AEC-Q100-002 / JESD22-A114. 6: According to AEC-Q100-011B. 7: According to AEC-Q100-003 / JESD22-A115. 2.2 Nomenclature Used in this Document Some terms and names used in this data sheet deviate from those referred to in the LIN specifications. Equivalent values are shown below. † NOTICE : Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. LIN 2.1 Name Term used in the following tables VBAT not used ECU operating voltage VSUP VBB Supply voltage at device pin VBUS_LIM ISC Current limit of driver VBUSREC VIH(LBUS) Recessive state VBUSDOM VIL(LBUS) Dominant state |
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