MMSF3P02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

24

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

4.0

2.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

—

—

0.06

0.08

0.075

0.095

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

3.0

7.2

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

1010

1400

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

740

920

Transfer Capacitance

f = 1.0 MHz)

Crss

—

260

490

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

25

50

ns

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

—

135

270

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

54

108

Fall Time

G = 6.0 Ω)

tf

—

84

168

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

16

32

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

40

80

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

110

220

Fall Time

G = 6.0 Ω)

tf

—

97

194

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

—

33

46

nC

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q1

—

3.0

—

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q2

—

11

—

Q3

—

10

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.35

0.96

1.75

—

Vdc

Reverse Recovery Time

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

76

—

ns

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

32

—

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

44

—

Reverse Recovery Stored Charge

QRR

—

0.133

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.