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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ADL5303ACPZ-R2 датащи(PDF) 11 Page - Analog Devices |
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ADL5303ACPZ-R2 датащи(HTML) 11 Page - Analog Devices |
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11 / 24 page  Data Sheet ADL5303 Rev. 0 | Page 11 of 24 For an input of 1 nA, SNSD evaluates to almost 0.5 μV/√Hz; assuming a 20 kHz bandwidth at this current, the integrated noise voltage is 70 μV rms. However, this calculation is not complete. The basic scaling of the VBE is approximately 3 mV/dB; translated to 10 mV/dB, the noise predicted by Equation 7 must be multiplied by approximately 3.33. The additive noise effects associated with the reference transistor, Q2, and the temperature compensation circuitry must also be included. The final voltage noise spectral density presented at the VLOG pin varies inversely with IPD, but is not a simple square root relationship. Figure 10 shows the measured noise spectral density vs. frequency at the VLOG output, for the same nine-decade spaced values of IPD. CHIP ENABLE Power down the ADL5303 by taking the PWDN pin to a high logic level. The residual supply current in the disabled mode is typically 60 μA. |
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