MMFT5P03HD

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

28

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.75

3.5

3.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(1) (3)

(VGS = 10 Vdc, ID = 5.2 Adc)

(VGS = 4.5 Vdc, ID = 2.6 Adc)

RDS(on)

—

—

79

119

100

150

m

Ω

Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)

(1)

gFS

2.0

4.0

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

475

950

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

220

440

Transfer Capacitance

f = 1.0 MHz)

Crss

—

70

140

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

I

4 0 Ad

td(on)

—

12

24

ns

Rise Time

(VDD = 15 Vdc, ID = 4.0 Adc,

VGS =10Vdc

tr

—

24

48

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω) (1)

td(off)

—

47

94

Fall Time

G

)( )

tf

—

46

92

Turn–On Delay Time

(V

15 Vd

I

2 0 Ad

td(on)

—

19

38

Rise Time

(VDD = 15 Vdc, ID = 2.0 Adc,

VGS =4 5Vdc

tr

—

55

110

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(off)

—

30

60

Fall Time

G

)( )

tf

—

40

80

Gate Charge

(V

24 Vd

I

4 0 Ad

QT

—

17

24

nC

(VDS = 24 Vdc, ID = 4.0 Adc,

Q1

—

1.7

—

( DS

, D

,

VGS = 10 Vdc) (1)

Q2

—

6.3

—

Q3

—

4.6

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 4.0 Adc, VGS = 0 Vdc) (1)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.1

0.89

1.5

—

Vdc

Reverse Recovery Time

(I

4 0 Ad

V

0 Vd

trr

—

39

—

ns

(IS = 4.0 Adc, VGS = 0 Vdc,

ta

—

20

—

( S

,

GS

,

dIS/dt = 100 A/µs) (1)

tb

—

19

—

Reverse Recovery Stored Charge

QRR

—

0.042

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.