IXTA80N10T

IXTP80N10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. On through-kole packages R

must be 5 mm or less from the package body.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

33

55

S

C

iss

3040

pF

C

oss

V

420

pF

C

rss

90

pF

t

d(on)

31

ns

t

r

54

ns

t

d(off)

40

ns

t

f

48

ns

Q

g(on)

60

nC

Q

gs

V

21

nC

Q

gd

15

nC

R

thJC

0.65

°C/W

R

thCS

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

80

A

I

SM

Repetitive, Pulse Width Limited by T

JM

220

A

V

SD

I

1.1

V

t

rr

100

ns

I

V

Resistive Switching Times

V

R

TO-220 (IXTP) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-263 (IXTA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

1. Gate

2. Drain

3. Source